跨导
逆变器
三元运算
逻辑门
晶体管
电气工程
材料科学
电子工程
光电子学
计算机科学
工程类
电压
程序设计语言
作者
Somi Kim,Yunchae Jeon,H.S. Cho,Chang‐Hyun Kim,Hocheon Yoo
标识
DOI:10.1109/led.2024.3368346
摘要
This study presents a novel approach to designing a ternary inverter utilizing a negative transconductance (NTC) behavior field-effect transistor (FET) with pull-down switching. The NTC FET is constructed by combining partially-deposited p-type and n-type semiconductors. The key advantages of the NTC FET, including hysteresis-free operation and a clear peak-to-valley current ratio (PVCR) of 9.6 A/A, enable the proposed ternary inverter to exhibit stable transient characteristics over a duration of 250 sec, covering three logic states. The effectiveness of the design is further supported by experimental results and simulation analysis.
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