Growth mechanism of Mn-doped diamond (111) layers in microwave plasma chemical vapor deposition

Mn-doped diamond (111) layers were grown by microwave plasma chemical vapor deposition using bis(methylcyclopentadienyl)manganese as a Mn source. The Mn concentration ([Mn]) was intentionally controlled in the range between ∼1 × 1015 and ∼1 × 1017 cm−3 by regulating the Mn/C molar ratio in the gas phase within 0.15%–3.0%. When [Mn] > ∼1 × 1016 cm−3, the step edges of the growing surface changed from straight to a zigzag shape. Using a model based on the classic theory by Cabrera and Vermilyea, we show that this roughening of the step edges resulted from step pinning due to Mn atoms absorbed on the diamond surfaces.