Dramatic Reduction of Silicon Surface Recombination by ALD TiOxCapping Layer from TiCl4and H2O: The Role of Chlorine

Amorphous thin-film TiO_x prepared via atomic layer deposition (ALD) has been identified as one of the most promising materials for use in transparent passivating contacts in high-efficiency and low-cost crystalline silicon (c-Si) solar cells. As highlighted in this work, the passivation performance of ALD TiO_x layers strongly depends on the metal precursor used, with films prepared using TiCl₄ recently showing the best results. However, a full understanding of how such films achieve their high level of surface passivation has not yet been demonstrated. This study provides a clear demonstration that a key part of this passivation mechanism is due to chlorine (Cl) accumulation at the Si surface. This mechanism is demonstrated to be quite general in nature by showing how 2 nm of ALD TiO_x (TiCl₄ + H₂O) can be applied as a capping layer for either ZnO or Al₂O₃ interlayers to dramatically reduce silicon surface recombination. Cl depth profiles obtained using secondary ion mass spectrometry confirm the presence of Cl extending through the depth of the interlayers with a peak at the silicon interface. Remarkably, this diffusion of Cl is observed following low-temperature (75 °C) deposition of the TiO_x capping layer, without any subsequent thermal treatment. Contrary to earlier studies that treated residual Cl in ALD films as a general contamination issue, these findings reveal unequivocally that chlorine plays a crucial role in Si surface passivation and can be classed as an effective passivation element, similar to hydrogen in its ability to passivate Si dangling bonds. The outcomes of this research emphasize the importance of residual chlorine in enhancing the passivation of buried interfaces and provide additional motivation for employing metal chloride precursors for silicon surface passivation applications.