Waveguide-integrated Aluminum-MoTe2 Schottky Photodetectors for the wavelength-band extended to 2 μm

Transition metal dichalcogenide (TMDC) materials with excellent optoelectronic properties have attracted much attention in the fields of reconfigurable electronic devices, next-generation FETs, and photodetectors (PDs). While normal TMDC PDs have a bandgap-limited absorption edge of ∼1.3 µm, metal-TMDC Schottky PDs based on internal photoemission provide an operation band extension strategy. In this study, we demonstrate that a TMDC PD can even operate at the wavelength band as long as 2.0 µm by judiciously choosing TMDC and metal materials to construct a low barrier height Schottky PD. Specifically, a silicon waveguide-integrated Al-MoTe