Antimony fluoride (SbF3): A potent hole suppressor for tin(II)‐halide perovskite devices

Abstract Tin (Sn 2+ )‐based halide perovskites have been developed as the most promising alternatives to their toxic Pb‐based counterparts in optoelectronic devices. However, the facile tin vacancy formation and easy oxidization characteristics make Sn 2+ ‐based perovskites highly p‐doped with excessive hole concentrations, which significantly hinder their applications. Herein, we demonstrate a potent hole inhibitor of antimony fluoride (SbF 3 ), which possesses a higher hole‐suppression capability than conventional tin fluoride (SnF 2 ). A small amount of SbF 3 allows a wide range of hole‐density modulation with no or less SnF 2 addition, thus mitigating the negative effects of using only SnF 2 . A SnF 2 /SbF 3 co‐additive approach was further developed to achieve high‐performance Sn 2+ perovskite thin‐film transistors operated in the enhancement mode with a five‐fold enhancement of the field‐effect mobility and improved operational stability compared to using only SnF 2 . We expect that the SbF 3 hole suppressor and co‐additive approach can provide opportunities for the development of high‐efficiency Sn 2+ ‐perovskite optoelectronic devices. image