Unlocking the Potential of Rare Earth‐Enriched Aluminum Oxo Clusters for Enhanced Dielectric Properties

Comprehensive Summary This study highlights the innovative use of increased rare earth elements to enhance the dielectric properties of materials and devices. The AlOC‐129Ln series, features the highest number of rare earth dopants in aluminum oxo clusters to date. The trivalent ions in AlOC‐129Ln impart a high dipole moment, significantly elevating the dielectric constant ( k ) of the doped polymer films. AlOC‐129Ce, in particular, exhibits the largest molecular size, which enhances interfacial effects and achieves a relative dielectric constant four times greater than that of undoped polymers and 1.5 times higher than those with single rare earth dopants. The substantial molecular size (~2.5 nm) and robust charge scattering and trapping capabilities of AlOC‐129Ln reduce dielectric loss by up to 50% at high frequencies. Additionally, its excellent solution processability enhances breakdown strength by 147%, ensuring superior electrical stability. This research demonstrates the versatility of the cluster doping strategy in effectively balancing dielectric constant and loss, unveiling the promising potential of solution‐processable cluster materials in electronic devices.