Preparation of high-quality Y:Hf0.5Zr0.5O2 ferroelectric gate dielectric film by chemical solution deposition

As the continuous development trend of microelectronic integrated circuit products towards high performance and high density, HfO2-based ferroelectric films have been widely used due to their reversibly bistable polarization states and piezoelectricity. In this paper, yttrium doped hafnium-zirconium dioxide (Y-HZO) gate dielectric was fabricated by chemical solution deposition (CSD) on P-type silicon (111) substrate. The way to stabilize the ferroelectric phase by adjusting the film growth process was also studied. Electrical properties are discribed, in which the films with different thicknesses were annealed at 600 °C–800 °C in air, N2, O2 and vacuum environments. This work lays a foundation for the future application of HfO2-based ferroelectric gate dielectric in Ferroelectric gate transistor (FGT).