Sputter deposition of 2D MoS2 thin films -A critical review from a surface and structural perspective

(a) The diagrammatic representation of the equipment of fabrication for CVD process for Synthesis of MoS 2 by reaction between Mo foil and S and (b) space-confined CVD growth of the samples MoS 2 (c) The diagrammatic representation of the CVD process for Synthesis of MoS 2 by reaction between MoO 3 and S (d) Raman spectra of thin films of MoS 2 at distinct hydrogen flow rate (e) The MoS 2 samples photoluminescence spectra at different sputtering time. • Structural and Morphological properties of MoS 2 thin films is influenced by various parameters is encapsulated. • Prevalently explored techniques for the fabrication of thin films of MoS 2 with some drawbacks are discussed. • Sputtering technique is excellent technique for extensive growth of thin films of MoS 2 . • Potentiality of sputtered 2D thin films of MoS 2 in various domains is discussed. Two-dimensional (2D) molybdenum disulfide (MoS 2 ) belongs to the family of transition metal dichalcogenides and has emerged as promising semiconducting material. When MoS 2 transforms from bulk to nanoscale form, it offers intriguing properties such as high mechanical resilience and a direct bandgap. MoS 2 exhibits the potential to greatly improve the performance of electronic and optoelectronic devices. In this review article, we focus on the promising characteristics of 2D MoS 2 thin films and their applications in a variety of fields. Various significant methods for synthesis of MoS 2 using dfifferent sputtering techniques and the effect of various parameters during sputtering such as sputtering power, sputtering temperature, flow rate, thermal annealing, sputtering time etc. have been addressed here. This review article will be a fine starting point to comprehend the previous investigations on the sputtering of thin films of MoS 2 and their possible technological applications. The significance of sputtered thin films of MoS 2 has been discussed in the context of a variety of important applications including transistors, gas sensors, supercapacitors, photovoltaic and other device applications.