佩多:嘘
材料科学
石墨烯
图层(电子)
光电子学
纳米技术
作者
Xue Wang,Shanlei Guo,Yanhong Tong,Xiaoli Zhao,Qingxin Tang,Yichun Liu
标识
DOI:10.1109/led.2022.3215968
摘要
A facile and damage-free patterning pro- cess was proposed to solve the incompatibility in the traditional photolithography process by introducing graphene oxide (GO) as a protective layer for poly (3,4-ethylenedioxythiophene): polystyrene (PEDOT:PSS) film. As a result, a high-resolution GO/PEDOT:PSS elec- trode array with a feature size down to $3 ~\mu \text{m}$ was fabricated. Moreover, the PEDOT:PSS films exhibit average optical transparency up to 92.6% in the visible light range, excellent conductivity (~2000 S cm−1), and high conformability. Based on the GO/PEDOT:PSS electrode array, the confor- mal organic field-effect transistors with the highest mobility of up to 1.4 cm $^{{2}}\,\,\text{V}^{-{1}}\,\,\text{s}^{-{1}}$ and average mobility of 0.83 cm $^{\vphantom {\text {D}^{\text {j}}}{2}}\,\,\text{V}^{-{1}}\,\,\text{s}^{-{1}}$ by layer-by-layer lamination were successfully fabricated. Our process was highly compatible with traditional photolithographic patterning techniques, which may provide a route for the integration of complex soft electronics.
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