Research on the Substitution of MIM Capacitors and MOM Capacitors on 12-INCH 90-NM BCD Process

At present, the capacitors used in the 12-inch 90nm BCD process are still mainly MIM (metal-insulator-metal) capacitors. Compared with MOM (metal-oxide-metal) capacitors, MIM capacitors exhibit more stable capacitive characteristics. However, MOM capacitors do not require additional fabrication masks during the manufacturing process, are easier to produce, and feature high capacitance density. By comparing the voltage linearity, temperature linearity, mismatch performance and WAT (wafer acceptance test) results of MIM capacitors and MOM capacitors on the 12-inch 90nm BCD process, we preliminarily proved the similarity in performance of the two capacitors, indicating the possibility of partially replacing MIM capacitors with MOM capacitors in the future of semiconductor manufacturing.