Electromigration-Induced Evolution of Micromorphology and Electrical Properties in Gold Nanowires: Implications for Nanoelectronics

In this investigation, atomic force microscopy (AFM) was employed to meticulously examine the electromigration phenomena occurring in pure gold nanowires possessing a mere 10 nm thickness. The study elucidates the dynamic evolution of the micromorphology of gold nanowires during the electromigration process, providing insights into the intricate processes leading to the formation of voids, hillocks, and nano gaps. Significantly, the intricate relationship between these morphological changes and the consequential impact on electrical properties, particularly the resistance of the nanowires, is systematically unveiled. A qualitative analysis of the formation mechanisms behind voids and hillocks was conducted, contributing to a deeper understanding of the electromigration-induced phenomena. This study holds significance in controlling the width and position of metal nanogaps, offering promising avenues for the advancement of gap-based nanoelectronic and memory devices.