Plasma antennas formed in a Ge crystal under laser irradiation

The possibilities of using plasma formed by laser radiation in Ge- and Si semiconductors to create plasma antennas are analyzed. The dependences of the amplitude of the emitted microwave signal in the range of 6-7.5 GHz on the laser power and the length of the irradiated section on the semiconductor plate, which served as a transmitting vibrating antenna, were obtained. It is shown that the amplitude of the transmitted signal during the formation of a plasma antenna in Si and Ge crystals can be increased by more than an order of magnitude. The proposed method for creating a semiconductor plasma antenna with initiation by laser radiation has great prospects for creating materials with controlled electromagnetic characteristics in the radio, microwave and THz spectral ranges.