材料科学
碳化硅
飞秒
通量
超短脉冲
辐照
放松(心理学)
声子
激光器
硅
凝聚态物理
分子物理学
原子物理学
光电子学
光学
物理
社会心理学
心理学
核物理学
冶金
作者
George D. Tsibidis,Leonidas Mouchliadis,M. Pedio,Emmanuel Stratakis
出处
期刊:Physical review
日期:2020-02-24
卷期号:101 (7)
被引量:13
标识
DOI:10.1103/physrevb.101.075207
摘要
We present a theoretical investigation of the yet unexplored dynamics of the produced excited carriers upon irradiation of hexagonal silicon carbide (6H-SiC) with femtosecond laser pulses. To describe the ultrafast behavior of laser-induced out-of-equilibrium carriers, a real-time simulation based on density-functional theory methodology is used to compute both the hot-carrier dynamics and transient change of the optical properties. A two-temperature model (TTM) is also employed to derive the relaxation processes (i.e., thermal equilibration between carrier and lattice through carrier-phonon coupling) for laser pulses of wavelength 401 nm, duration 50 fs at normal incidence irradiation which indicate that surface damage on the material occurs for fluence $\ensuremath{\sim}1.88\phantom{\rule{0.16em}{0ex}}\mathrm{J}\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{\ensuremath{-}2}$. This approach of linking real-time calculations, transient optical properties, and TTM modeling, has strong implications for understanding both the ultrafast dynamics and processes of energy relaxation between carrier and phonon subsystems and providing a precise investigation of the impact of hot-carrier population in surface damage mechanisms in solids.
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