聚噻吩
材料科学
有机半导体
弹性模量
半导体
晶体管
薄膜
电子迁移率
光电子学
复合材料
聚合物
噻吩
纳米技术
导电聚合物
电压
有机化学
电气工程
化学
工程类
作者
Brendan T. O’Connor,Edwin P. Chan,Catherine Chan,Brad Conrad,Lee J. Richter,R. Joseph Kline,Martin Heeney,Iain McCulloch,Christopher L. Soles,Dean M. DeLongchamp
出处
期刊:ACS Nano
[American Chemical Society]
日期:2010-11-16
卷期号:4 (12): 7538-7544
被引量:210
摘要
The elastic moduli of polythiophenes, regioregular poly(3-hexylthiophene) (P3HT) and poly-(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT), are compared to their field effect mobility showing a proportional trend. The elastic moduli of the films are measured using a buckling-based metrology, and the mobility is determined from the electrical characteristics of bottom contact thin film transistors. Moreover, the crack onset strain of pBTTT films is shown to be less than 2.5%, whereas that of P3HT is greater than 150%. These results show that increased long-range order in polythiophene semiconductors, which is generally thought to be essential for improved charge mobility, can also stiffen and enbrittle the film. This work highlights the critical role of quantitative mechanical property measurements in guiding the development of flexible organic semiconductors.
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