发光
碲化镉光电
材料科学
光电子学
矿物学
化学
作者
L. Kowałczyk,S.J. Fancey,Gerald S. Buller,J. S. Massa,M. Kutrowski,E. Janik,G. Karczewski,T. Wójtowicz,A.K. Żakrzewski,J. Kossut
标识
DOI:10.12693/aphyspola.87.508
摘要
Time-resolved photoluminescence was used to study exciton recombination in deep CdTe/Cd0.5Mn0.5Tesingle quantum well.The width of the investigated well was 100 A. The study was performed at room temperature.The lifetime of the exciton determined in this work has a value comparable to that observed in shallow CdTe/Cd0.85Mn0.15Tequantum wells.A strong enhancement of the photoluminescence decay time with increasing intensity of the exciting laser beam is observed which is indicative of saturation of the non-radiative recombination centers.
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