肖特基势垒
材料科学
碲化镉光电
金属
肖特基二极管
金属半导体结
光电子学
冶金
二极管
作者
J. Szatkowski,K. Sierański,J.F. Kasprzak
标识
DOI:10.12693/aphyspola.79.175
摘要
The Schottky barrier height of Al, Mg and Ag on chemically prepared p-type surface were measured witl I-V techniques.The barrier heights were found to be independent of metal used, and equal to 0.73 ± 0.02 eV.
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