Natural ordering of ZnO/sub 1-x/Se/sub x/ grown by radical source MBE

Technology for growth of ZnO wide bandgap semiconductor crystal has improved greatly using RS (radical source)-MBE. Recently, ZnO is now gathering a great interest for optoelectrical devices applications and the importance of bandgap engineering in ZnO material system is increasing. We have reported a new bandgap engineering technique using bandgap bowing of the ZnO/sub 1-x/Se/sub x/ anion compound semiconductors. In previous work, the ZnO/sub 1-x/Se/sub x/ bandgap bowing parameter had been obtained and the difficulty of Se incorporation in ZnO crystal was suggested. We report on the interesting Se incorporation characteristics in ZnO.