Cellulose Fiber-Based Hierarchical Porous Bismuth Telluride for High-Performance Flexible and Tailorable Thermoelectrics

碲化铋 材料科学 柔性电子器件 热电材料 热电效应 光电子学 溅射沉积 数码产品 多孔性 功勋 复合材料 弯曲半径 薄膜 声子 热导率 纳米技术 工程物理 溅射 弯曲 凝聚态物理 电气工程 物理 工程类 热力学
作者
Qun Jin,Wen-Bo Shi,Yang Zhao,Jixiang Qiao,Jianhang Qiu,Chao Sun,Hao Lei,Kaiping Tai,Xin Jiang
出处
期刊:ACS Applied Materials & Interfaces [American Chemical Society]
卷期号:10 (2): 1743-1751 被引量:113
标识
DOI:10.1021/acsami.7b16356
摘要

Porous modification is a general approach to endowing the rigid inorganic thermoelectric (TE) materials with considerable flexibility, however, by which the TE performances are severely sacrificed. Thus, there remains an ongoing struggle against the trade-off between TE properties and flexibility. Herein, we develop a novel strategy to combine Bi2Te3 thick film with ubiquitous cellulose fibers (CFs) via an unbalanced magnetron sputtering technique. Owing to the nano-micro hierarchical porous structures and the excellent resistance to crack propagation of the Bi2Te3/CF architectures, the obtained sample with a nominal Bi2Te3 deposition thickness of tens of micrometers exhibits excellent mechanically reliable flexibility, of which the bending deformation radius could be as small as a few millimeters. Furthermore, the Bi2Te3/CF with rational internal resistance and tailorable shapes and dimensions are successfully fabricated for practical use in TE devices. Enhanced Seebeck coefficients are observed in the Bi2Te3/CF as compared to the dense Bi2Te3 films, and the lattice thermal conductivity is remarkably reduced due to the strong phonon scattering effect. As a result, the TE figure of merit, ZT, is achieved as high as ∼0.38 at 473 K, which competes with the best flexible TEs and can be further improved by optimizing the carrier concentrations. We believe this developed technique not only opens up a new window to engineer flexible TE materials for practical applications but also promotes the robust development of the fields, such as paper-based flexible electronics and thin-film electronics.
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