神经形态工程学
非易失性存储器
薄膜
材料科学
波动性(金融)
数码产品
电子材料
质子
纳米技术
电子线路
光电子学
计算机科学
化学
电气工程
物理
工程类
物理化学
量子力学
机器学习
人工神经网络
金融经济学
经济
作者
Takeaki Yajima,Satya Prakash Pati
摘要
Volatile memories are one of the essential analog devices used in recent electronics, such as neuromorphic circuits and reservoir computing. However, since the application of volatile memories is relatively recent, basic research on the volatility function in the materials is still lacking. In this study, we focused on electrochemically doped protons inside the TiO2 thin film as one of the simplest platforms for volatile functions and aimed to clarify the design principle for volatile memories. It was found that the proton volatility from the TiO2 surface can be controlled by the slow proton diffusion inside a few-nm SiO2 cap layer, where TiO2 and SiO2 can be viewed as a proton container and a sealing cap, respectively. It was further shown that both volatile and nonvolatile protons exist in TiO2 thin films, and hence, suppressing the influence of the latter would be essential for exploiting functions from volatile protons. These results indicate that simple material stacks with nanoscale thickness can control volatile protons in solid-state devices, providing a basic design principle for volatile memories.
科研通智能强力驱动
Strongly Powered by AbleSci AI