Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors

Two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2), have attracted tremendous attention in constructing advanced monolithic integrated circuits (ICs) for future flexible and energy-efficient electronics. However, the development of large-scale ICs based on 2D materials is still in its early stage, mainly due to the non-uniformity of the individual devices and little investigation of device and circuit level optimization. Herein, we successfully synthesized a 4-inch high-quality monolayer MoS2 film, which was then used to fabricate top gated (TG) MoS2 field-effect transistors (FETs) with wafer-scale uniformity. Some basic circuits such as SRAM and ring oscillators were first examined. A pass-transistor logic configuration based on pseudo-NMOS was then employed to design more complex MoS2 logic circuits, which were successfully fabricated with proper logic functions tested. These preliminary integration efforts show the promising potential of wafer-scale 2D semiconductors for application in complex ICs. This article is protected by copyright. All rights reserved