First-Principles Investigations of the Physical Properties of Experimentally Feasible Novel Aluminum Nitride Polytypes

纤锌矿晶体结构 氮化物 材料科学 相图 电子结构 理论(学习稳定性) 相(物质) 结构稳定性 声子 化学稳定性 化学物理 凝聚态物理 热力学 纳米技术 化学 计算机科学 冶金 物理 结构工程 有机化学 工程类 图层(电子) 机器学习
作者
M.M. Alsardia,I. B. Khadka,Bakhtiar Ul Haq,Se Hun Kim,M.M. Alsardia,I. B. Khadka,Bakhtiar Ul Haq,Se Hun Kim
出处
期刊:Crystal Growth & Design [American Chemical Society]
卷期号:22 (4): 2342-2353 被引量:7
标识
DOI:10.1021/acs.cgd.1c01434
摘要

We present the results of a first-principles study on the structural stability and electronic and optical properties of new aluminum nitride (AlN) polytypes. The study includes the experimentally or theoretically known phases of AlN wurtzite (WZ), zincblende (ZB), and rock salt (RS) structures, which complement the pressure-dependent phase diagram of this industrially important compound. In addition to the structures of AlN considered in previous studies, we evaluated the dynamic stability of various novel phases: viz., SiC(4H), ZnS(15R), BeO, 5-5, TiAs, NiAs, MoC, Li2O2, and NiS. These were predicted recently in a high-pressure data-mining study of more than 140000 variations of the AlN structure, which claimed that they were either stable or nearly stable, on the basis of first-principles calculations. On the basis of the new AlN polytypes, the physical properties of all considered phases were compared, and the common trends and differences were determined. According to the phonon band structure calculations, nine phases of these new polytypes are free from imaginary frequencies. This indicates an adequate dynamic stability and the experimental accessibility of the polytypes. Additionally, the calculated cohesive energies of the dynamically stable phases are comparable to those of WZ-AlN and those specified in the available literature. Furthermore, the observed electronic structures and optical properties indicate that the polytypism of AlN can be a practical tool for refining its physical and chemical properties. The new phases show significant potential for use in future electronic and optoelectronic applications of AlN.
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