接受者
工艺CAD
杂质
电导
电子迁移率
MOSFET
硅
物理
计算物理学
晶体管
材料科学
凝聚态物理
光电子学
化学
电压
计算机辅助设计
量子力学
生物化学
作者
C. Lombardi,Stefano Manzini,Antonio Saporito,Massimo Vanzi
摘要
A semiempirical model for carrier mobility in silicon inversion layers is presented. The model, strongly oriented to CAD (computer-aided design) applications, is suitable for two-dimensional numerical simulations of nonplanar devices. A local mobility function, set up in terms of a simple Mattiessen's rule, provides a careful description of MOSFET operation in a wide range of normal (or gate) electric fields, channel impurity concentrations of between 5*10/sup 14/ cm/sup -3/ and 10/sup 17/ cm/sup -3/ for the acceptor density of states and 6*10/sup 14/ cm/sup -3/ and 3*10/sup 17/ cm/sup -3/ for the donor density of states; and temperatures between 200 K and 460 K. Best-fit model parameters are extracted by comparing the calculated drain conductance with a very large set of experimental data points.< >
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