Characterization and removal of ion yield transients in the near surface region of secondary ion mass spectrometry depth profiles

A method for removing ion yield transients from the beginning of secondary ion mass spectrometry (SIMS) depth profiles is evaluated. Ion yield transients, which result from the concentration buildup of yield enhancing primary ion species, may be characterized by depth profiling standards which are bulk doped with the element of interest. The transients of B+ and B− in Si were characterized using an O+2 and Cs+ primary ion beam, respectively. The resulting transient correction functions were used to correct depth profiles of 10 and 4 keV B implants in Si.