Matthew D. McCluskey,Chris G. Van de Walle,Cyrus P. Master,Lucia Romano,N. M. Johnson
出处
期刊:Applied Physics Letters [American Institute of Physics] 日期:1998-05-25卷期号:72 (21): 2725-2726被引量:213
标识
DOI:10.1063/1.121072
摘要
Band gap measurements have been performed on strained InxGa1−xN epilayers with x⩽0.12. The experimental data indicate that the bowing of the band gap is much larger than commonly assumed. We have performed first-principles calculations for the band gap as a function of alloy composition and find that the bowing is strongly composition dependent. At x=0.125 the calculated bowing parameter is b=3.5 eV, in good agreement with the experimental values.