响应度
材料科学
光电探测器
飞秒
光电子学
紫外线
探测器
激光器
比探测率
图层(电子)
制作
光学
时间常数
钻石
响应时间
暗电流
作者
Yifan Zhang,Si Shen,Yuntao Mo,L Wang,Yi-Xiang Wang,Junxing Dong,Huashan Li,X G Wang,Zhenfeng Zhang,Xun Yang,Guang Wang,Chongxin Shan,Hai Zhu
摘要
ABSTRACT To realize all‐carbon diamond‐based photodetectors for high‐temperature sensing, an integrated diamond/graphite deep‐ultraviolet (DUV) detector is demonstrated and fabricated via femtosecond (fs) laser‐induced graphitization. The influence of the graphitized transition layer on the diamond surface is investigated, and the carrier transport mechanism across the interface under high‐temperature conditions is analyzed. At room‐temperature (RT), the integrated diamond/graphite detector exhibits robust performance: a photo‐to‐dark current ratio (PDCR) of 7 × 10 5 at 70 V bias, a responsivity of 110 A/W at 80 V along with a detectivity of 5.8 × 10 14 Jones. Notably, the device displays fast temporal dynamics, featuring decay time constants of 28 µs ( τ 1 ) and 2.5 ms ( τ 2 ). In addition, the device achieves a peak responsivity of 440 A/W at 570 K. Our results offer a feasible route to fabricating the high‐performance diamond‐based DUV photodetectors for operation in high‐temperature and harsh environments.
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