材料科学
氢
钼
复合材料
分析化学(期刊)
冶金
化学
色谱法
有机化学
作者
Ye Gao,Aihua Yan,Huaqi Yuan,Fei Huang,Zigao Su,Wenxue Zhao,Jixu Zhang,B. C. HUI,Heng Wang
标识
DOI:10.1021/acsaem.5c01161
摘要
Artificial regulation of the charge transfer pathway is an effective strategy for optimizing the charge dynamics and enhancing the photocatalytic hydrogen production. Herein, MoS 2 /S v -ZnIn 2 S 4 /Ni(OH) 2 composites were synthesized by an in situ structure-tailored technique. Systematic investigations confirmed the existence of sulfur vacancy (S v ), Ohmic-type MoS 2 /S v -ZnIn 2 S 4 junction, and p-n-type S v -ZnIn 2 S 4 /Ni(OH) 2 heterojunction in MoS 2 /S v -ZnIn 2 S 4 /Ni(OH) 2 composites. Specifically, n-type MoS 2 and p-type Ni(OH) 2 acted as the electron transport layer and hole transport layer, which not only achieved the carrier spatial separation and directional charge transfer but also suppressed the carrier recombination and enhanced the hydrogen reduction reaction dynamics. As a result, the optimized composites displayed an outstanding photocatalytic H 2 -releasing rate of 12.34 mmol·g –1 ·h –1, which was 5.96 times higher than that of pristine ZnIn 2 S 4 . This work provides an unusual opinion for developing the multichannel-modification photocatalysts with a controllable charge transfer route.
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