材料科学
铁电性
电介质
切换时间
极化(电化学)
电压
光电子学
压电响应力显微镜
电容
物理
化学
物理化学
电极
量子力学
作者
Trygve Magnus Ræder,Shuyu Qin,Rama K. Vasudevan,Tor Grande,Joshua Agar,Michael J. Zachman
标识
DOI:10.1002/advs.202201530
摘要
Ferroelectrics are being increasingly called upon for electronic devices in extreme environments. Device performance and energy efficiency is highly correlated to clock frequency, operational voltage, and resistive loss. To increase performance it is common to engineer ferroelectric domain structure with highly-correlated electrical and elastic coupling that elicit fast and efficient collective switching. Designing domain structures with advantageous properties is difficult because the mechanisms involved in collective switching are poorly understood and difficult to investigate. Collective switching is a hierarchical process where the nano- and mesoscale responses control the macroscopic properties. Using chemical solution synthesis, epitaxially nearly-relaxed (100) BaTiO3 films are synthesized. Thermal strain induces a strongly-correlated domain structure with alternating domains of polarization along the [010] and [001] in-plane axes and 90° domain walls along the [011] or [01 1¯$\bar{1}$ ] directions. Simultaneous capacitance-voltage measurements and band-excitation piezoresponse force microscopy revealed strong collective switching behavior. Using a deep convolutional autoencoder, hierarchical switching is automatically tracked and the switching pathway is identified. The collective switching velocities are calculated to be ≈500 cm s-1 at 5 V (7 kV cm-1 ), orders-of-magnitude faster than expected. These combinations of properties are promising for high-speed tunable dielectrics and low-voltage ferroelectric memories and logic.
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