次谐波
电子工程
混合(物理)
晶体管
计算机科学
电路设计
无线电频率
石墨烯
电气工程
材料科学
工程类
电信
物理
纳米技术
非线性系统
电压
量子力学
作者
Mari Carmen Pardo,Francisco Pasadas,Alberto Medina‐Rull,Mikel García Palomo,Sergio Ortiz,Enrique G. Marín,A. Godoy,Francisco G. Ruiz
出处
期刊:
日期:2025-03-14
卷期号:20 (1): 52-52
被引量:1
标识
DOI:10.1186/s11671-025-04221-x
摘要
Abstract Ambipolar conductance in graphene field-effect transistors (GFETs), and in particular their quasi-quadratic I–V transfer characteristic, makes these devices excellent candidates for exploiting subharmonic mixing at high frequencies. Several realizations have already demonstrated the ability of GFETs to compete with, or even improve, state-of-the-art mixers based on traditional technologies. Nonetheless, a systematic analysis of the influence on performance of both circuit design and technological aspects has not been conducted yet. In this work, we present a comprehensive assessment of the conversion losses by means of applying radio-frequency circuit design techniques in terms of filtering and matching, along with the impact stemming from physical and geometric variations of a fabricated graphene technology.
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