Improving the brightness of quasi-2D perovskite light-emitting diode by controlling stoichiometric ratio of perovskite emission layer

The quasi-two-dimensional (quasi-2D) perovskite possesses good film coverage and high photoluminescence quantum efficiency, and exhibits a characteristic of high-level radiation recombination. However, the charge transferring from quasi-2D perovskites is not comparable to that of three-dimensional perovskites due to the insulating nature of large organic cations, thus limits the brightness of quasi-2D perovskite light-emitting diodes (PLEDs). In this work, phenylethylammonium bromide (PEABr) and formamidine hydrobromide (FABr) were strategically introduced as two spacer cations to form quasi-2D perovskite phase, thus weakened the van der Waals gap between individual perovskite layers. The enhanced coupling strength between each layer promoted the energy transfer efficiency and led to an increasing radiative recombination rate of the perovskite films. Meanwhile, an optimized molar ratio of PEABr: FABr: PbBr2 improved perovskite film morphology and passivated its defects, which reduced the nonradiative recombination loss of quasi-2D PLEDs. As a result, a maximum brightness of 32,368 cd m − 2 can be obtained for this kind of devices.