Effect of TiO2-SiO2 composite films on the performance of perovskite solar cells

Abstract Nano-TiO 2 semiconductor film has the characteristics of high porosity and large specific surface area. However, there is much surface state in the TiO 2 semiconductor film, and its energy level is in the band gap, which forms a local state with traps, restricts the movement of electrons in the film, and causes serious electron recombination. In this paper, the TiO 2 surface is covered with a wide band gap semiconductor SiO 2 in the electron transport layer of the perovskite solar cell. A core-shell electrode is formed to inhibit electron recombination and improve efficiency of perovskite solar cells.