材料科学
数码产品
光电子学
氮化物
电力电子
半导体
工程物理
固态
Crystal(编程语言)
纳米技术
电气工程
计算机科学
工程类
图层(电子)
电压
程序设计语言
作者
Robert T. Bondokov,Justin Mark,Kasey Hogan,Griffin Q. Norbury,James R. Grandusky
出处
期刊:Elsevier eBooks
[Elsevier]
日期:2023-01-01
标识
DOI:10.1016/b978-0-323-96027-4.00007-3
摘要
Nitride based semiconductor devices have become mainstream with solid state lighting in nearly every home and power electronics becoming more prominent even with the lack of native substrates. GaN substrates are available up to 6″ diameter and are enabling advanced devices. AlN bulk growth has accelerated in the last decade with the achievement of 2″ substrates with >99% single crystal area and defect densities below 103 cm−1. In addition, the availability has increased, and the cost continues to decrease. Current development is focused on 4″ diameter and reduced cost to accelerate to improve the efficiency of optoelectronics and power electronics.
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