神经形态工程学
记忆电阻器
人工神经网络
可靠性(半导体)
冯·诺依曼建筑
计算机科学
领域(数学)
人工智能应用
电阻式触摸屏
电阻随机存取存储器
组分(热力学)
深度学习
高效能源利用
人工智能
电子工程
计算机体系结构
计算机工程
功率(物理)
电气工程
工程类
物理
操作系统
热力学
量子力学
电压
数学
计算机视觉
纯数学
作者
Hyungjun Park,Joon‐Kyu Han,Seongpil Yim,Dong Hoon Shin,T. Park,Kyung Seok Woo,Soo Hyung Lee,J. Cho,Hyun Wook Kim,Taegyun Park,Cheol Seong Hwang
标识
DOI:10.1002/adma.202412549
摘要
Abstract Advancements in artificial intelligence (AI) and big data have highlighted the limitations of traditional von Neumann architectures, such as excessive power consumption and limited performance improvement with increasing parameter numbers. These challenges are significant for edge devices requiring higher energy and area efficiency. Recently, many reports on memristor‐based neural networks (Mem‐NN) using resistive switching memory have shown efficient computing performance with a low power requirement. Even further performance optimization can be made using engineering resistive switching mechanisms. Nevertheless, systematic reviews that address the circuit‐to‐material aspects of Mem‐NNs, including their dedicated algorithms, remain limited. This review first categorizes the memristor‐based neural networks into three components: pre‐processing units, processing units, and learning algorithms. Then, the optimization methods to improve integration and operational reliability are discussed across materials, devices, circuits, and algorithms for each component. Furthermore, the review compares recent advancements in chip‐level neuromorphic hardware with conventional systems, including graphic processing units. The ongoing challenges and future directions in the field are discussed, highlighting the research to enhance the functionality and reliability of Mem‐NNs.
科研通智能强力驱动
Strongly Powered by AbleSci AI