Low Frequency Noise of Elevated-Metal Metal-Oxide Thin-Film Transistor

In this letter, low frequency noise (LFN) of elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) is systematically investigated for the first time. EMMO TFT possesses distinctive LFN characteristics due to its unique device structure. The dominant mechanism of LFN varies with the channel length and overdrive voltage. The competition between carrier number fluctuation and mobility fluctuation is mainly tuned by the annihilation of ionized oxygen vacancies in the active layer located in the overlap region between the gate and the source/drain electrode. Besides, the short channel effect is also involved. This work provides a fresh perspective on LFN in metal oxide (MO) TFTs, offering practical design guidelines for fabricating robust MO TFTs.