绝缘体上的硅
绝热过程
材料科学
光电子学
波分复用
CMOS芯片
物理
波长
硅
热力学
作者
Danielius Kramnik,Josep M. Fargas Cabanillas,Ðorđe Gluhović,Sidney Buchbinder,Miloš A. Popović,Vladimir Stojanović
出处
期刊:Conference on Lasers and Electro-Optics
日期:2022-01-01
卷期号:22: SF4M.2-SF4M.2
被引量:1
标识
DOI:10.1364/cleo_si.2022.sf4m.2
摘要
Adiabatic microrings with opposing p/n contacts achieve full carrier sweepout in reverse bias and energy-efficient carrier injection in forward bias, exhibiting 200GHz/V peak shift in C-band for athermal tuning over a 220 GHz range.
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