钝化
材料科学
兴奋剂
发光二极管
钙钛矿(结构)
原位
对偶(语法数字)
配体(生物化学)
化学工程
光电子学
纳米技术
有机化学
图层(电子)
艺术
生物化学
化学
受体
文学类
工程类
作者
Ye Pu,Ru‐Shi Liu,Mingjin Li,Xiao Wang,Zhenfu Zhao,Z. Hu
标识
DOI:10.1002/adom.202501902
摘要
Abstract Mixed‐halide perovskite nanocrystals (PeNCs), such as CsPbBr x I 3‐x , offer tunable emission and high photoluminescence quantum yield (PLQY) for pure red perovskite light‐emitting diodes (PeLEDs). However, surface defects and phase instability, worsened by long‐chain ligands, reduce stability and efficiency. A dual‐strategy approach is developed by combining Mg 2 ⁺ doping with in situ 1,8‐octanedithiol passivation to fabricate stable, efficient CsPbBr x I 3‐x PeNCs films. Mg 2 ⁺ doping induces lattice contraction, suppresses iodine vacancies, and enhances phase stability. In situ 1,8‐octanedithiol treatment, using ethyl acetate as a nonpolar antisolvent, replaces insulating ligands with short‐chain HS − ‐terminated ligands, passivating defects. These PeNC films enable pure red PeLEDs with a 635 nm emission peak, an external quantum efficiency (EQE) of 24.2%, a luminance of 14406 cd m − 2 , and a half‐life of 69 min at 1000 cd m − 2 , outperforming pristine PeNCs‐based devices (EQE of 3.15%, T 50 of 12 min). This in situ strategy minimizes deposition‐induced defects, offering a scalable route for high‐performance PeLEDs in display technologies.
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