Aluminium Thin Film Prepared by Direct Current Reactive Magnetron Sputtering

Aluminium thin film was prepared by direct current reactive magnetron sputtering on Ni alloy and silicon wafer substrates with the pure aluminum as the target and pure O2 as the reactive gas.The deposition rate and morphology of the aluminium thin film was studied.The results show that the deposition rate firstly increases linearly and then changes little with the increase of sputtering power.At first,the deposition rate increases with the increase of working pressure and reaches the biggest value at 1.0 Pa and then begin to decrease when the working pressure increases further.While the deposition rate continuously increases with the increase of Ar/O2 flow rate.Firstly,the deposition rate decreases sharply with the rising negative bias and then varies little.The surface morphology of the aluminium film before and after annealing was observed by SEM.The film annealing at 500 ℃ for 1 h gets more compact and smooth.