Improved Carbon Nanotube Field Effect Transistor for Designing a Hearing Aid Filtering Application

Designing a hearing aid device is one of the challenging applications recently, since it is useful for the people with hearing loss. For this purpose, various circuit designing procedures such as MOSFET and carbon nanotube field effect transistor (CNTFET) are introduced in the existing works. But it mainly lacks the following drawbacks: increased leakage current, not highly efficient, and increased area and power consumption. In order to mitigate these issues, this paper is aimed at designing an improved CNTFET (ECNFET) for hearing aid filtering application. The major objectives of the proposed work are leakage current minimization and the improvements in transconductance and mobility. At first, the layout is designed with 10 layers based on the specific dimensionalities, and different materials are placed in each and every layer. It includes gold, silicon, silicon dioxide, bismuth telluride, and carbon tube. Then, the parameters such as band gap, electron concentration, hole concentration, electron mobility, hole mobility, and insulator breakage voltage are verified to determine the efficiency of the layout. If all the parameters are satisfied, the characteristics such as voltage current, leakage current, mobility, and transconductance are validated. If all measures are satisfied, the library is created for the designed ECNFET layout by using the Comsol tool. Furthermore, the operational amplifier is designed based on the generated library function. After amplification, the hearing aid filter is designed with the use of the proposed ECNFET layout. The experimental validation of the proposed work and comparison with the existing method based on the measures of area consumption, power consumption, speed, and frequency range confirm the effectiveness of ECNTFET in filtering applications.