Selective hydrogenation improves interface properties of high-k dielectrics on 2D semiconductors

The integration of high-k dielectrics with two-dimensional (2D) semiconductors is a critical step towards high-performance nanoelectronics, which however remains challenging due to the high density of interface states and the damage to the monolayer 2D semiconductors. In this study, we propose a selective hydrogenation strategy to improve the interface properties while the 2D semiconductors are not affected. Using the interface of monolayer molybdenum disulfide (MoS2) and silicon nitride as an example, we show substantially improved interface properties for electronic applications after the interfacial hydrogenation, as evidenced by reduced inhomogeneous charge redistribution, increased band offset, and nearly intact electronic properties of MoS2. Importantly, this hydrogenation process selectively occurs only at the silicon nitride surface and is compatible with the current semiconductor fabrication process. We further show that this strategy is general and applicable to other interfaces between high-k dielectrics and 2D semiconductors such as hafnium dioxide (HfO2) on the monolayer MoS2. Our results demonstrate a simple yet viable way to improve the integration of high-k dielectrics on a broad range of 2D transition metal disulfide semiconductors, shedding light on practical electronic and optoelectronic applications.