电场
霍尔效应
多铁性
材料科学
电阻率和电导率
凝聚态物理
自旋电子学
异质结
磁场
非易失性存储器
光电子学
铁电性
铁磁性
物理
电介质
量子力学
作者
Yuanjun Yang,Yingxue Yao,Lei Chen,Haoliang Huang,Benjian Zhang,Hui Lin,Zhenlin Luo,Chen Gao,Yalin Lu,Xiaoguang Li,Gang Xiao,Ce Feng,Yonggang Zhao
摘要
Electric-field control of the anomalous Hall effect (AHE) was investigated in Fe40Pt60/(001)-Pb(Mg1/3Nb2/3)0.67Ti0.33O3 (FePt/PMN-PT) multiferroic heterostructures at room temperature. It was observed that a very large Hall resistivity change of up to 23.9% was produced using electric fields under a magnetic field bias of 100 Oe. A pulsed electric field sequence was used to generate nonvolatile strain to manipulate the Hall resistivity. Two corresponding nonvolatile states with distinct Hall resistivities were achieved after the electric fields were removed, thus enabling the encoding of binary information for memory applications. These results demonstrate that the Hall resistivity can be reversibly switched in a nonvolatile manner using programmable electric fields. Two remanent magnetic states that were created by electric-field-induced piezo-strain from the PMN-PT were attributed to the nonvolatile and reversible properties of the AHE. This work suggests that a low-energy-consumption-based approach can be used to create nonvolatile resistance states for spintronic devices based on electric-field control of the AHE.
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