Method for producing via-connections in semiconductor wafers using a combination of plasma and chemical etching

A via-connection is formed in a silicon wafer by metallization of a plasma etched groove followed by chemical etching of the opposite surface of the wafer up to the top of the metallized groove and by patterning a contact pad. Conductor patterns and/or portions of circuit elements on each of the opposite major surfaces of the wafer connected ohmically to the appropriate contact pads are electrically connected by the described via-connection.