光电二极管
光电探测器
光电子学
硅光子学
材料科学
光子学
干涉测量
光学
波导管
光功率
物理
激光器
作者
Ta-Ching Tzu,Keye Sun,Robert Costanzo,Daniel Ayoub,Steven M. Bowers,Andréas Beling
标识
DOI:10.1109/jstqe.2019.2911458
摘要
We report on arrayed germanium-on-silicon waveguide photodetectors for high-power analog applications utilizing the AIM Photonics silicon foundry. Photodetector arrays with two, four, and eight elements reach output powers of -0.4 dBm, 10 dBm, and 14.3 dBm at 18 GHz, 12 GHz, and 5 GHz, respectively. The 4-photodiode array has an output third order intercept point (OIP3) above 20 dBm up to 12 GHz and shows a 5-dB improvement over a single photodiode. An integrated 20 GHz receiver based on a pair of balanced photodiodes and a Mach-Zehnder delay line interferometer is successfully demonstrated in an optical phase-modulated link.
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