Study of Blue InGaN Multiple Quantum wells Light-emitting Diodes with P-type Quantum Barriers
作者
Chao Liu,Taiping Lü,Zhiwei Ren,Xin Chen,Bijun Zhao,Yian Yin,Jinhui Tong,Shuti Li
标识
DOI:10.1364/acp.2012.as3f.3
摘要
Blue light-emitting diodes with p-GaN and p-AlGaN barriers have been numerically studied. The results show that when the traditional p-GaN barriers were replaced by p-AlGaN barriers, improved light output power and efficiency droop were observed.