Preparation of MoS2 films for sensor applications

The paper presents a method of producing single layers of molybdenum disulphide on silicon substrates covered with a layer of 275nm silicon dioxide produced by means of thermal oxidation. MoS₂ was obtained using the CVD (Chemical Vapor Deposition) technique, and the process parameters were the heating temperatures of the substrates - sulfur and molybdenum oxide, the carrier gas flow in the reactor and the deposition time. Subsequently, the obtained layers were characterized using optical microscopy, atomic force microscopy and Raman spectroscopy. The obtained parameters of layers allow in the future to use them in sensory techniques.