Theoretical Studies of Tunnel Magnetoresistance and Shot Noise in a Schottky-Barrier Carbon Nanotube Transistor with Ferromagnetic Contacts

A Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts was modelled.The theoretical method combines a tightbinding model and the non-equilibrium Green function technique.Tunnel magnetoresistance as well as current noise of the carbon nanotube fieldeffect transistor are the main issues addressed in this study.It is shown that the former may exceed 50%, whereas the latter is characterized by the Poissonian Fano factor (F ) within the sub-threshold region, and the sub-Poissonian F ≈ 0.5 for elevated gate voltages.Remarkably, reorientation of relative magnetization alignments of the contacts may lead to noticeable changes in the current noise.