低噪声放大器
放大器
单片微波集成电路
光电子学
电气工程
Ku波段
电子工程
材料科学
噪声系数
物理
宽带
W波段
作者
Shigeo Kawasaki,Harunobu Seita,Munenari Kawashima,Masakazu Hori,Kei Satoh,Yasunori Suzuki
出处
期刊:Asia-Pacific Microwave Conference
日期:2010-12-01
卷期号:: 1497-1500
被引量:3
摘要
The new design method for the low noise GaAs MMIC amplifier was described. The wide-band characteristic by the distributed amplifier was extended with low noise amplifier circuit technology in the first and even the second FET of the multi-stage FET amplifier. Through the experiment of the three-stage amplifier, the gain over 30 dB with NF below 2.0 dB over 7 to 14 GHz were obtained with the compact size of 3.3 mm × 1.7 mm. In addition, the gain of 30.9 dB and NF of 1.3 dB at 175 K were observed at 13 GHz. It is confirmed that the design method proposed in this study for the low noise MMIC amplifier can be effective in a communication system as well as to the radio astronomy.
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