Dependence of optical absorption spectra of the flat double nanoheterostructures Al1-xGaxN/GaN/Al1-xGaxN from their thickness and concentration

The energy of ground state of electron, hole and exiton in quasi-two-dimensional semiconductor nanoheterostructure with quantum well (nanofilm) are calculated by using the dielectric continuum model, approximation of effective masses and Green's function method. Dependence of these energies on nanofilms thickness and barrier material composition have been studied taken into account effects of quantum confinement, self-polarization of the heterojunction planes and interaction with warious branches of optical phonons in such nanohetrostructures. Specific calculation was made for nanofilm GaN embedded in barrier material Al_xGa_1-xN, both of him have wurtzite-type structure. It has been studied on this base the influence of changes of nanofilm thickness and barrier material composition on the spectral location the electron absorption edge and exciton peaks in such nanoheterostructures. The results of this study may be of practical interest, since excitons provide a sensitive indicator of material quality.