Organometal tri-halide perovskite resistive switching device with PMMA electrode interlayer

Organometal halide perovskite material was investigated as a promising candidate for resistive random-access memory (RRAM). In order to improve the stability of perovskite RRAM, a polymethyl methacrylate (PMMA) interlayer was inserted between perovskite and metal electrode. High ON-OFF current ratio (106) and operating voltage as low as 0.5 V were achieved in the PMMA encapsulated perovskite RRAM.