Investigation of Sputtering Damage in SrRuO3Films Prepared by Sputtering with Raman and X-ray Photoemission Spectroscopies

Sputtering damage of SrRuO3 (SRO) films prepared by RF magnetron sputtering under various growth pressures was investigated by Raman spectroscopy and X-ray photoemission spectroscopy (XPS). Phonon modes that were related to Ru and Sr ions changed and XPS spectra shifted with decreasing growth pressure. These results indicate that Sr ions switched place with Ru ions in SRO films when the SRO films had sputtering damage under low-growth-pressure sputtering condition as determined from Raman spectroscopy and XPS measurement. The antisite ion content increased with decreasing growth pressure. The resistivity of the SRO films also increased with increasing antisite ion content. The dynamics of sputtering damage revealed that the antisite Sr and Ru ions were formed in SRO films.