单斜晶系
材料科学
纳米电子学
氧气
化学物理
空位缺陷
凝聚态物理
纳米技术
兴奋剂
相(物质)
氧化物
结晶学
晶体缺陷
化学
光电子学
晶体结构
冶金
物理
有机化学
作者
Dustin Schrecongost,Haitian Zhang,Roman Engel‐Herbert,Cheng Cen
摘要
It was demonstrated recently that the nano-optical and nanoelectronic properties of VO2 can be spatially programmed through the local injection of oxygen vacancies by atomic force microscope writing. In this work, we study the dynamic evolution of the patterned domain structures as a function of the oxygen vacancy concentration and the time. A threshold doping level is identified that is critical for both the metal–insulator transition and the defect stabilization. The diffusion of oxygen vacancies in the monoclinic phase is also characterized, which is directly responsible for the short lifetimes of sub-100 nm domain structures. This information is imperative for the development of oxide nanoelectronics through defect manipulations.
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