磁电阻
凝聚态物理
朗道量子化
有效质量(弹簧-质量系统)
霍尔效应
磁场
半金属
兴奋剂
舒布尼科夫-德哈斯效应
接受者
杂质
化学
电阻率和电导率
电子能带结构
量子振荡
振荡(细胞信号)
半导体
带隙
材料科学
物理
费米面
超导电性
量子力学
生物化学
有机化学
光电子学
作者
V. A. Kulbachinskii,A. Yu. Kaminsky,R. A. Lunin,Koichi Kindo,Yasuo Narumi,Kazuyoshi Suga,Shinji Kawasaki,Minoru Sasaki,Naoki Miyajima,P. Lošťák,Pavel Hájek
标识
DOI:10.1088/0268-1242/17/10/318
摘要
The Hall effect and the Shubnikov–de Haas (SdH) effect have been investigated in magnetic fields up to 54 T in p-(Bi1−xSbx)2Te3 (0 ≤ x ≤ 1.0) Sn doped single crystals. Doping of (Bi1−xSbx)2Te3 with tin has shown that Sn exhibits acceptor properties in all crystals. We discuss the valence band structure of (Bi1−xSbx)2Te3 with the upper valence band (light hole band (LHB)), the lower valence band (heavy hole band (HHB)) and Sn-induced impurity band (IB). The Hall resistivity ρH as a function of magnetic field shows quantization in the form of plateaus. The calculated Landau levels of the LHB with the best-fit parameters are in agreement with the experiment. The oscillation of ρH is due to the presence of the carrier reservoir. The impurity resonant band with a high density of states or the HHB with a higher hole effective mass serve as the reservoir.
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